Applied Physics A

, Volume 100, Issue 1, pp 79–82

Magnetic properties of Er-doped ZnO films prepared by reactive magnetron sputtering

Authors

    • The Key Laboratory for Magnetism and Magnetic Materials of MOELanzhou University
    • Department of Physics, School of Physical Science and TechnologyLanzhou University
    • Quantum Structures Laboratory, Department of Electrical EngineeringUniversity of California at Riverside
  • Daqiang Gao
    • The Key Laboratory for Magnetism and Magnetic Materials of MOELanzhou University
  • Jinhong Liu
    • The Key Laboratory for Magnetism and Magnetic Materials of MOELanzhou University
  • Wenge Yang
    • The Key Laboratory for Magnetism and Magnetic Materials of MOELanzhou University
  • Qi Wang
    • Department of Physics, School of Physical Science and TechnologyLanzhou University
  • Jinyuan Zhou
    • Department of Physics, School of Physical Science and TechnologyLanzhou University
  • Yinghu Yang
    • Department of Physics, School of Physical Science and TechnologyLanzhou University
  • Jianlin Liu
    • Quantum Structures Laboratory, Department of Electrical EngineeringUniversity of California at Riverside
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DOI: 10.1007/s00339-010-5796-8

Cite this article as:
Qi, J., Gao, D., Liu, J. et al. Appl. Phys. A (2010) 100: 79. doi:10.1007/s00339-010-5796-8

Abstract

All Zn1−x Er x O (x=0.04, 0.05, and 0.17) films deposited on glass substrates by radio-frequency reactive magnetron sputtering exhibit the mixture of ferromagnetic and paramagnetic phases at room temperature. The estimated magnetic moment per Er ion decreases with the increase of Er concentration. The temperature dependence of the magnetization indicates that there is no intermetallic ErZn buried in the films. The ferromagnetism is attributed to the Er ions substitution for Zn2+ in ZnO lattices, and it can be interpreted by the bound-magnetic-polaron model.

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© The Author(s) 2010