Applied Physics A

, Volume 99, Issue 1, pp 39–46

Size parameter effect of dielectric small particle mediated nano-hole patterning on silicon wafer by femtosecond laser

  • Tetsuo Sakai
  • Yuto Tanaka
  • Yuji Nishizawa
  • Mitsuhiro Terakawa
  • Minoru Obara
Article

DOI: 10.1007/s00339-010-5576-5

Cite this article as:
Sakai, T., Tanaka, Y., Nishizawa, Y. et al. Appl. Phys. A (2010) 99: 39. doi:10.1007/s00339-010-5576-5

Abstract

By use of a polystyrene particle with a fundamental (800 nm) and a second-harmonic (400 nm) wave of a femtosecond Ti:sapphire laser, nano-hole patterning properties on a silicon wafer were experimentally compared by keeping the size parameter constant. With the 800-nm wave, the patterned hole diameter ranged from 100 to 250 nm and the depth ranged from 20 to 100 nm. With the 400-nm wave, the hole diameter ranged from 50 to 200 nm while the depth ranged from 10 to 60 nm. The patterned diameter and the depth of patterned nano-holes were also controllable by the laser fluence. By the 3D finite-difference time-domain method it is numerically predicted that if the size parameter is kept at π approximately, the nano-hole patterning is efficiently performed even in the ultraviolet region of the spectrum.

Copyright information

© Springer-Verlag 2010

Authors and Affiliations

  • Tetsuo Sakai
    • 1
  • Yuto Tanaka
    • 1
  • Yuji Nishizawa
    • 1
  • Mitsuhiro Terakawa
    • 1
  • Minoru Obara
    • 1
  1. 1.Department of Electronics and Electrical Engineering, Faculty of Science and TechnologyKeio UniversityYokohamaJapan