Optical–electrical hybrid operation with amorphous Ge1Sb4Te7 phase change thin films
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- Zhai, F., Huang, H., Wang, Y. et al. Appl. Phys. A (2010) 98: 795. doi:10.1007/s00339-009-5526-2
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Based on study of non-isothermal crystallization kinetics and orthogonal test of pulsed-laser crystallization parameters of Ge1Sb4Te7, minimum nanosecond laser pulse duration (threshold) for crystallization recording was used for optical–electrical hybrid operation. The crystallized bits arrays were optically recorded with minimum pulse duration of 40 ns and electrically read out with maximum current signal contrast of ∼20 times.