Applied Physics A

, Volume 98, Issue 4, pp 795–800

Optical–electrical hybrid operation with amorphous Ge1Sb4Te7 phase change thin films

  • Fengxiao Zhai
  • Huan Huang
  • Yang Wang
  • Yiqun Wu
  • Fuxi Gan
Article

DOI: 10.1007/s00339-009-5526-2

Cite this article as:
Zhai, F., Huang, H., Wang, Y. et al. Appl. Phys. A (2010) 98: 795. doi:10.1007/s00339-009-5526-2

Abstract

Based on study of non-isothermal crystallization kinetics and orthogonal test of pulsed-laser crystallization parameters of Ge1Sb4Te7, minimum nanosecond laser pulse duration (threshold) for crystallization recording was used for opticalelectrical hybrid operation. The crystallized bits arrays were optically recorded with minimum pulse duration of 40 ns and electrically read out with maximum current signal contrast of ∼20 times.

Copyright information

© Springer-Verlag 2009

Authors and Affiliations

  • Fengxiao Zhai
    • 1
  • Huan Huang
    • 1
  • Yang Wang
    • 1
  • Yiqun Wu
    • 1
  • Fuxi Gan
    • 1
  1. 1.Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghaiChina

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