Applied Physics A

, Volume 95, Issue 2, pp 325–327

High-resolution analytical electron microscopy of catalytically etched silicon nanowires

Authors

    • Interdisziplinäres Zentrum für MaterialwissenschaftenMartin-Luther-Universität Halle-Wittenberg
  • N. Geyer
    • Interdisziplinäres Zentrum für MaterialwissenschaftenMartin-Luther-Universität Halle-Wittenberg
  • B. Fuhrmann
    • Interdisziplinäres Zentrum für MaterialwissenschaftenMartin-Luther-Universität Halle-Wittenberg
  • F. Heyroth
    • Interdisziplinäres Zentrum für MaterialwissenschaftenMartin-Luther-Universität Halle-Wittenberg
  • H. S. Leipner
    • Interdisziplinäres Zentrum für MaterialwissenschaftenMartin-Luther-Universität Halle-Wittenberg
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DOI: 10.1007/s00339-009-5101-x

Cite this article as:
Schade, M., Geyer, N., Fuhrmann, B. et al. Appl. Phys. A (2009) 95: 325. doi:10.1007/s00339-009-5101-x

Abstract

We report on the characterization of hexagonally ordered, vertically aligned silicon nanowires (SiNW) by means of analytical transmission electron microscopy. Combining colloidal lithography, plasma etching, and catalytic wet etching arrays of SiNW of a sub-50 nm diameter with an aspect ratio of up to 10 could be fabricated. Scanning transmission electron microscopy has been applied in order to investigate the morphology, the internal structure, and the composition of the catalytically etched SiNW. The analysis yielded a single-crystalline porous structure composed of crystalline silicon, amorphous silicon, and SiOx with x≤2.

PACS

61.46.Km68.37.Ma82.45.Vp

Copyright information

© Springer-Verlag 2009