Applied Physics A

, Volume 95, Issue 1, pp 43–48

Continuous tuning of the threshold voltage of organic thin-film transistors by a chemically reactive interfacial layer

Open Access
Article

DOI: 10.1007/s00339-008-4995-z

Cite this article as:
Etschmaier, H., Pacher, P., Lex, A. et al. Appl. Phys. A (2009) 95: 43. doi:10.1007/s00339-008-4995-z

Abstract

For the design and manufacture of complex integrated circuits, control over the threshold voltage of the transistors is essential. In the present contribution, we present a non-invasive method to tune the threshold voltage of organic thin-film transistors after device assembly over a wide range without any significant degradation of the device characteristics. This is realized by incorporating a thin, chemically reactive siloxane layer bonded to the gate oxide. This results in threshold voltages of around 70 V in the as-prepared devices. By exposing a transistor modified in this way to ammonia at different concentrations, the threshold voltage can be tuned in steps of only a few volts. This treatment affects only the charge density at the semiconductor–dielectric interface, leaving the overall shape of the transistor characteristics and the charge-carrier mobility largely unaltered.

PACS

81.05.Hd 85.30.De 85.30.Tv 81.16.Dn 73.40.Qv 73.61.Ph 07.07.Df 
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Copyright information

© The Author(s) 2008

Authors and Affiliations

  • Harald Etschmaier
    • 1
  • Peter Pacher
    • 1
  • Alexandra Lex
    • 2
  • Gregor Trimmel
    • 2
  • Christian Slugovc
    • 2
  • Egbert Zojer
    • 1
  1. 1.Institute of Solid State PhysicsGraz University of TechnologyGrazAustria
  2. 2.Institute for Chemistry and Technology of MaterialsGraz University of TechnologyGrazAustria
  3. 3.Institute of Physical ChemistryUniversity of MünsterMünsterGermany

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