Applied Physics A

, Volume 94, Issue 3, pp 521–524

Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon

Authors

    • Institute of Bio- and Nanosystems (IBN 1–IT)Research Centre Juelich
    • JARA—Fundamentals of Future Information Technologies
  • J. M. J. Lopes
    • Institute of Bio- and Nanosystems (IBN 1–IT)Research Centre Juelich
    • JARA—Fundamentals of Future Information Technologies
  • E. Durğun Özben
    • Institute of Bio- and Nanosystems (IBN 1–IT)Research Centre Juelich
    • JARA—Fundamentals of Future Information Technologies
  • C. Sandow
    • Institute of Bio- and Nanosystems (IBN 1–IT)Research Centre Juelich
    • JARA—Fundamentals of Future Information Technologies
  • S. Lenk
    • Institute of Bio- and Nanosystems (IBN 1–IT)Research Centre Juelich
    • JARA—Fundamentals of Future Information Technologies
  • T. Heeg
    • Department of Materials Science and EngineeringThe Pennsylvania State University
  • J. Schubert
    • Institute of Bio- and Nanosystems (IBN 1–IT)Research Centre Juelich
    • JARA—Fundamentals of Future Information Technologies
  • S. Mantl
    • Institute of Bio- and Nanosystems (IBN 1–IT)Research Centre Juelich
    • JARA—Fundamentals of Future Information Technologies
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DOI: 10.1007/s00339-008-4962-8

Cite this article as:
Roeckerath, M., Lopes, J.M.J., Durğun Özben, E. et al. Appl. Phys. A (2009) 94: 521. doi:10.1007/s00339-008-4962-8

Abstract

Long channel n-type metal oxide semiconductor field effect transistors on thin conventional and strained silicon on insulator substrates have been prepared by integrating gadolinium scandate as high-κ gate dielectric in a gate last process. The GdScO3 films were deposited by electron beam evaporation and subsequently annealed in oxygen atmosphere. Electrical characterization of readily processed devices reveals well behaved output and transfer characteristics with high I on/I off ratios of 106–108, and steep inverse subthreshold slopes down to 66 mV/dec. Carrier mobilities of 155 cm2/Vs for the conventional and 366 cm2/Vs for the strained silicon substrates were determined.

PACS

77.55.+f 85.30.Tv

Copyright information

© Springer-Verlag 2008