Long silicon nitride nanowires synthesized in a simple route
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- Li, GY., Li, XD., Wang, H. et al. Appl. Phys. A (2008) 93: 471. doi:10.1007/s00339-008-4808-4
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Long silicon nitride (Si3N4) nanowires with high purity were synthesized by heating mixtures of SiO2 powders and short carbon fibers at 1430°C for 2 h in a flowing N2 atmosphere. The nanowires had the length of 1–2 millimeters and the diameters of 70–300 nm, and were mainly composed of ⍺-Si3N4, growing along the  direction. The vapor–solid (VS) mechanism was employed to interpret the nanowires growth.