Applied Physics A

, Volume 93, Issue 2, pp 471–475

Long silicon nitride nanowires synthesized in a simple route

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DOI: 10.1007/s00339-008-4808-4

Cite this article as:
Li, GY., Li, XD., Wang, H. et al. Appl. Phys. A (2008) 93: 471. doi:10.1007/s00339-008-4808-4

Abstract

Long silicon nitride (Si3N4) nanowires with high purity were synthesized by heating mixtures of SiO2 powders and short carbon fibers at 1430°C for 2 h in a flowing N2 atmosphere. The nanowires had the length of 1–2 millimeters and the diameters of 70–300 nm, and were mainly composed of -Si3N4, growing along the [001] direction. The vapor–solid (VS) mechanism was employed to interpret the nanowires growth.

PACS

81.05.Je81.07.Bc81.10.Bk81.16.Be81.20.Ka

Copyright information

© Springer-Verlag 2008

Authors and Affiliations

  • Gong-Yi Li
    • 1
  • Xiao-Dong Li
    • 1
  • Hao Wang
    • 1
  • Zhong-Quan Li
    • 2
  1. 1.State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace and Materials EngineeringNational University of Defense TechnologyChangshaChina
  2. 2.Hunan Taixin Ceramics Co. Ltd.LiLingChina