Applied Physics A

, Volume 93, Issue 3, pp 617–620

Thickness distribution of thin amorphous chalcogenide films prepared by pulsed laser deposition

Authors

    • Research Centre LC523 ‘Advanced Inorganic Materials’, Faculty of Chemical TechnologyUniversity of Pardubice
  • Martin Hrdlička
    • Research Centre LC523 ‘Advanced Inorganic Materials’, Faculty of Chemical TechnologyUniversity of Pardubice
  • Petr Němec
    • Research Centre LC523 ‘Advanced Inorganic Materials’, Faculty of Chemical TechnologyUniversity of Pardubice
    • Department of General and Inorganic Chemistry, Faculty of Chemical TechnologyUniversity of Pardubice
  • Jan Přikryl
    • Research Centre LC523 ‘Advanced Inorganic Materials’, Faculty of Chemical TechnologyUniversity of Pardubice
  • Miloslav Frumar
    • Research Centre LC523 ‘Advanced Inorganic Materials’, Faculty of Chemical TechnologyUniversity of Pardubice
    • Department of General and Inorganic Chemistry, Faculty of Chemical TechnologyUniversity of Pardubice
Article

DOI: 10.1007/s00339-008-4687-8

Cite this article as:
Pavlišta, M., Hrdlička, M., Němec, P. et al. Appl. Phys. A (2008) 93: 617. doi:10.1007/s00339-008-4687-8

Abstract

Amorphous chalcogenide thin films were prepared from As2Se3, As3Se2 and InSe bulk glasses by pulsed laser deposition using a KrF excimer laser. Thickness profiles of the films were determined using variable angle spectroscopic ellipsometry. The influence of the laser beam scanning process during the deposition on the thickness distribution of the prepared thin films was evaluated and the corresponding equations suggested. The results were compared with experimental data.

PACS

81.15.Fg81.05.Kf
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© Springer-Verlag 2008