, Volume 90, Issue 4, pp 591-596,
Open Access This content is freely available online to anyone, anywhere at any time.

Transition region width of nanowire hetero- and pn-junctions grown using vapor–liquid–solid processes


The transition region width of nanowire heterojunctions and pn-junctions grown using vapor–liquid–solid (VLS) processes has been modeled. With two constituents or dopants I and II, the achievable width or abruptness of the junctions is attributed to the residual I atom/molecule stored in the liquid droplet at the onset of introducing II to grow the junction, and the stored I atom/molecule consumption into the subsequently grown crystal layers. The model yields satisfactory quantitative fits to a set of available Si-Ge junction data. Moreover, the model provides a satisfactory explanation to the relative junction width or abruptness differences between elemental and compound semiconductor junction cases, as well as a guideline for achieving the most desirable pn-junction widths.


81.07.-b; 64.75.Jk; 61.46.Km