Applied Physics A

, Volume 90, Issue 3, pp 577–579

Characterization of epitaxial lanthanum lutetium oxide thin films prepared by pulsed-laser deposition

Authors

    • Institute of Bio- and Nanosystems and Center of Nanoelectronic Systems for Information TechnologyResearch Centre Jülich
  • O. Trithaveesak
    • Institute of Bio- and Nanosystems and Center of Nanoelectronic Systems for Information TechnologyResearch Centre Jülich
  • W. Zander
    • Institute of Bio- and Nanosystems and Center of Nanoelectronic Systems for Information TechnologyResearch Centre Jülich
  • M. Roeckerath
    • Institute of Bio- and Nanosystems and Center of Nanoelectronic Systems for Information TechnologyResearch Centre Jülich
  • T. Heeg
    • Institute of Bio- and Nanosystems and Center of Nanoelectronic Systems for Information TechnologyResearch Centre Jülich
  • H.Y. Chen
    • Institute of Solid State Research and Ernst Ruska-Centre for Microscopy and Spectroscopy with ElectronsResearch Centre Jülich
  • C.L. Jia
    • Institute of Solid State Research and Ernst Ruska-Centre for Microscopy and Spectroscopy with ElectronsResearch Centre Jülich
  • P. Meuffels
    • Institute of Solid State ResearchResearch Centre Jülich
  • Y. Jia
    • Department of Materials Science and EngineeringThe Pennsylvania State University
  • D.G. Schlom
    • Department of Materials Science and EngineeringThe Pennsylvania State University
Article

DOI: 10.1007/s00339-007-4327-8

Cite this article as:
Schubert, J., Trithaveesak, O., Zander, W. et al. Appl. Phys. A (2008) 90: 577. doi:10.1007/s00339-007-4327-8

Abstract

Epitaxial thin films of LaLuO3 were deposited on SrTiO3(100) and SrRuO3/SrTiO3(100) or SrRuO3/LaAlO3(100) substrates using pulsed-laser deposition. They were investigated by means of Rutherford backscattering spectrometry, X-ray diffraction, transmission electron microscopy and atomic force microscopy. Smooth, c-axis oriented films with a channeling minimum yield of 3% were obtained. The electrical characterization of Au/LaLuO3/SrRuO3/SrTiO3(100) and Au/LaLuO3/SrRuO3/LaAlO3(100) metal–insulator–metal capacitor stacks revealed a dielectric constant of κ>45 and a breakdown field of 2 MV/cm for 100 nm thick epitaxial LaLuO3 films.

Copyright information

© Springer-Verlag 2007