Characterization of epitaxial lanthanum lutetium oxide thin films prepared by pulsed-laser deposition
- First Online:
- Cite this article as:
- Schubert, J., Trithaveesak, O., Zander, W. et al. Appl. Phys. A (2008) 90: 577. doi:10.1007/s00339-007-4327-8
Epitaxial thin films of LaLuO3 were deposited on SrTiO3(100) and SrRuO3/SrTiO3(100) or SrRuO3/LaAlO3(100) substrates using pulsed-laser deposition. They were investigated by means of Rutherford backscattering spectrometry, X-ray diffraction, transmission electron microscopy and atomic force microscopy. Smooth, c-axis oriented films with a channeling minimum yield of 3% were obtained. The electrical characterization of Au/LaLuO3/SrRuO3/SrTiO3(100) and Au/LaLuO3/SrRuO3/LaAlO3(100) metal–insulator–metal capacitor stacks revealed a dielectric constant of κ>45 and a breakdown field of 2 MV/cm for 100 nm thick epitaxial LaLuO3 films.