Applied Physics A

, Volume 88, Issue 4, pp 633–637

Characterization and electrical properties of high-k GdScO3 thin films grown by atomic layer deposition

  • P. Myllymäki
  • M. Roeckerath
  • M. Putkonen
  • S. Lenk
  • J. Schubert
  • L. Niinistö
  • S. Mantl
Article

DOI: 10.1007/s00339-007-4069-7

Cite this article as:
Myllymäki, P., Roeckerath, M., Putkonen, M. et al. Appl. Phys. A (2007) 88: 633. doi:10.1007/s00339-007-4069-7

Abstract

Gadolinium scandium oxide (Gd-scandate, GdScO3) thin films were grown by atomic layer deposition (ALD) from β-diketonate precursors M(thd)3 (M=Gd, Sc; thd=2,2,6,6-tetramethyl-3,5-heptanedionato) and ozone. The deposition parameters were optimized to produce films with the stoichiometric 1:1 metal ratio and a series of samples with nominal thicknesses of 5, 10, 15, and 20 nm were prepared. At 300 °C the metal precursor pulsing ratio Gd:Sc=5:6 yielded amorphous stoichiometric films and a growth rate of 0.21 Å/cycle. The films stayed amorphous up to 900 °C. The surface was probed with an AFM and the rms roughness was found to be 0.3 nm for the 5–20 nm thick films. The electrical properties of the as-deposited films proved to be very promising, with a dielectric constant of ∼22 and leakage current density of 340 μA/cm2, measured at -2 V.

Copyright information

© Springer-Verlag 2007

Authors and Affiliations

  • P. Myllymäki
    • 1
  • M. Roeckerath
    • 2
  • M. Putkonen
    • 3
  • S. Lenk
    • 2
  • J. Schubert
    • 2
  • L. Niinistö
    • 1
  • S. Mantl
    • 2
  1. 1.Laboratory of Inorganic and Analytical ChemistryHelsinki University of TechnologyEspooFinland
  2. 2.Institute of Bio- and Nanosystems and Center of Nanoelectronic Systems for Information TechnologyResearch Centre JülichJülichGermany
  3. 3.Beneq OyEnsimmäinen SavuVantaaFinland