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High performance III/V RTD and PIN diode on a silicon (001) substrate

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Abstract

We report on the fabrication of high performance InP-based devices on an exact (001)Si-substrate. On an InP-on-Si quasi-substrate, the growth of superlattices and low-temperature InAlAs buffer for surface and device layer improvement is investigated. The selected device examples are an InGaAsP PIN diode and an (In)AlAs/In(Ga)As resonant tunnelling diodes. The functionality of these examples relies sensitively on sharp interfaces of ultra thin layers and a high optical quality of epitaxially grown III/V layers silicon substrates. A qualitative improvement is obtained for a low-temperature InAlAs buffer layer grown prior to the of device layers. Based on device models extracted from the fabricated devices a potentially low-cost optical receiver circuit on a Si-substrate is proposed and simulated using HSPICE up to 10 Gbit/s.

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Authors and Affiliations

  1. Department of Solid-State Electronics, University Duisburg-Essen, 47048, Duisburg, Germany

    W. Prost, V. Khorenko, A.-C. Mofor, S. Neumann, A. Poloczek, A. Matiss & F.-J. Tegude

  2. AZUR SPACE Solar Power GmbH, 74072, Heilbronn, Germany

    V. Khorenko

  3. Institute for Semiconductor Technology, Technical University Braunschweig, 38106, Braunschweig, Germany

    A.-C. Mofor, A. Bakin & A. Schlachetzki

Authors
  1. W. Prost
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  2. V. Khorenko
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  3. A.-C. Mofor
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  4. S. Neumann
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  5. A. Poloczek
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  6. A. Matiss
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  7. A. Bakin
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  8. A. Schlachetzki
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  9. F.-J. Tegude
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Corresponding author

Correspondence to W. Prost.

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PACS

73.40.Kp; 73.43.Jn; 73.61.Ey; 78.70.Ck; 78.70.Gq

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Prost, W., Khorenko, V., Mofor, AC. et al. High performance III/V RTD and PIN diode on a silicon (001) substrate. Appl. Phys. A 87, 539–544 (2007). https://doi.org/10.1007/s00339-007-3920-1

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  • DOI: https://doi.org/10.1007/s00339-007-3920-1

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