Applied Physics A

, Volume 87, Issue 3, pp 443–449

Characterization of electronic materials and devices by scanning near-field microscopy

Authors

  • L.J. Balk
    • Fachbereich Elektrotechnik, Informationstechnik, Medientechnik, Lehrstuhl für ElektronikBergische Universität Wuppertal
    • Department of Electrical and Computer Engineering, Centre for Integrated Circuit Failure Analysis and Reliability (CICFAR)National University of Singapore
  • R. Heiderhoff
    • Fachbereich Elektrotechnik, Informationstechnik, Medientechnik, Lehrstuhl für ElektronikBergische Universität Wuppertal
  • J.C.H. Phang
    • Department of Electrical and Computer Engineering, Centre for Integrated Circuit Failure Analysis and Reliability (CICFAR)National University of Singapore
    • Fachbereich Elektrotechnik, Informationstechnik, Medientechnik, Lehrstuhl für ElektronikBergische Universität Wuppertal
Article

DOI: 10.1007/s00339-007-3910-3

Cite this article as:
Balk, L., Heiderhoff, R., Phang, J. et al. Appl. Phys. A (2007) 87: 443. doi:10.1007/s00339-007-3910-3

Abstract

Due to the reduction of structure sizes in modern electronic devices reliable characterization techniques are required in the nanometer range. Since the comparable wavelengths in investigation methods are larger, near-field techniques have to be used for nano-inspection allowing sub-wavelength resolution. Also many microscopy methods with static fields imply near-field approaches.

Analyzing several near-field approaches for fields and waves, a general concept for near-field description will be introduced which can be applied to various near-field interaction mechanisms. Based on scanning probe microscopy, different techniques are shown to determine locally miscellaneous properties which are important for modern electronic materials and devices.

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Copyright information

© Springer-Verlag 2007