Hot electron injector Gunn diode for advanced driver assistance systems
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- Förster, A., Lepsa, M., Freundt, D. et al. Appl. Phys. A (2007) 87: 545. doi:10.1007/s00339-007-3872-5
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This paper reviews the main aspects of the design, fabrication and characterization of GaAs Gunn diodes intended to be used in advanced driver assistance systems. The corresponding Gunn diode based oscillators operate at the microwave frequency of 77 GHz and deliver an output power up to 19.2 dBm (83.2 mW). To fulfill the high demands of the automotive industry, temperature stability and a high grade of frequency purity, the Gunn diode structure includes a hot electron injector. This is based on the heteroepitaxy of a graded gap AlxGa1-xAs layer and an adjacent thin highly doped GaAs layer. The hot electron injector properties are investigated using dc and rf electrical measurements, including the temperature influence as well. Specific production related data of the cavity oscillators using our Gunn diodes are presented. New alternatives, such as the resonant tunneling emitter as a hot electron injector and the Gunn diode based MMIC as oscillator, are introduced.