Applied Physics A

, Volume 87, Issue 3, pp 499–503

GaN and InN nanowires grown by MBE: A comparison


DOI: 10.1007/s00339-007-3871-6

Cite this article as:
Calarco, R. & Marso, M. Appl. Phys. A (2007) 87: 499. doi:10.1007/s00339-007-3871-6


Morphological, optical and transport properties of GaN and InN nanowires grown by molecular beam epitaxy (MBE) have been studied. The differences between the two materials in respect to growth parameters and optimization procedure was stressed. The nanowires crystalline quality has been investigated by means of their optical properties. A comparison of the transport characteristics was given. For each material a band schema was shown, which takes into account transport and optical features and is based on Fermi level pinning at the surface.

Copyright information

© Springer-Verlag 2007

Authors and Affiliations

  1. 1.Institute of Bio- and Nanosystems (IBN1) and CNI – Centre of Nanoelectronic Systems for Information TechnologyResearch Center JülichJülichGermany