Applied Physics A

, Volume 84, Issue 4, pp 369–371

Etching nano-holes in silicon carbide using catalytic platinum nano-particles

  • E. Moyen
  • W. Wulfhekel
  • W. Lee
  • A. Leycuras
  • K. Nielsch
  • U. Gösele
  • M. Hanbücken
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DOI: 10.1007/s00339-006-3639-4

Cite this article as:
Moyen, E., Wulfhekel, W., Lee, W. et al. Appl. Phys. A (2006) 84: 369. doi:10.1007/s00339-006-3639-4

Abstract

The catalytic reaction of platinum during a hydrogen etching process has been used to perform controlled vertical nanopatterning of silicon carbide substrates. A first set of experiments was performed with platinum powder randomly distributed on the SiC surface. Subsequent hydrogen etching in a hot wall reactor caused local atomic hydrogen production at the catalyst resulting in local SiC etching and hole formation. Secondly, a highly regular and monosized distribution of Pt was obtained by sputter deposition of Pt through an Au membrane serving as a contact mask. After the lift-off of the mask, the hydrogen etching revealed the onset of well-controlled vertical patterned holes on the SiC surface.

Copyright information

© Springer-Verlag 2006

Authors and Affiliations

  • E. Moyen
    • 1
  • W. Wulfhekel
    • 2
  • W. Lee
    • 2
  • A. Leycuras
    • 3
  • K. Nielsch
    • 2
  • U. Gösele
    • 2
  • M. Hanbücken
    • 1
  1. 1.Campus de LuminyCRMCN-CNRSMarseilleFrance
  2. 2.Max-Planck-Institute of Microstructure PhysicsHalleGermany
  3. 3.CRHEA-CNRSValbonneFrance