Applied Physics A

, Volume 84, Issue 3, pp 345–349

Structural and photoluminescence characteristics of ZnO films by room temperature sputtering and rapid thermal annealing process

  • P.-T. Hsieh
  • Y.-C. Chen
  • C.-M. Wang
  • Y.-Z. Tsai
  • C.-C. Hu
Article

DOI: 10.1007/s00339-006-3620-2

Cite this article as:
Hsieh, PT., Chen, YC., Wang, CM. et al. Appl. Phys. A (2006) 84: 345. doi:10.1007/s00339-006-3620-2

Abstract

ZnO thin films deposited on SiO2/Si substrates at room temperature by sputtering technology were annealed with a rapid thermal annealing process at various temperatures from 200 °C to 900 °C. The physical and optical properties of the ZnO films were investigated by X-ray diffraction, scanning electron microscopy and room-temperature photoluminescence (PL). The surface structures of the thin films showed great variations with increased annealing temperature. The PL spectrum illustrated that a stronger UV emission intensity appeared at an annealing temperature of 500 °C. On the other hand, visible-light emission could be obtained when the ZnO films were annealed above 500 °C and reached a maximum intensity at 900 °C. The possible mechanisms for visible-light emission are discussed.

Copyright information

© Springer-Verlag 2006

Authors and Affiliations

  • P.-T. Hsieh
    • 1
  • Y.-C. Chen
    • 1
  • C.-M. Wang
    • 2
  • Y.-Z. Tsai
    • 3
  • C.-C. Hu
    • 1
  1. 1.Department of Electrical EngineeringNational Sun Yat-Sen UniversityKaohsiungP.R. China
  2. 2.Department of Electrical EngineeringCheng Shiu UniversityKaohsiungP.R. China
  3. 3.Department of Electronic EngineeringCheng Shiu UniversityKaohsiungP.R. China

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