Applied Physics A

, Volume 84, Issue 1, pp 21–25

Stacked chalcogenide layers used as multi-state storage medium for phase change memory

  • Y.F. Lai
  • J. Feng
  • B.W. Qiao
  • Y.F. Cai
  • Y.Y. Lin
  • T.A. Tang
  • B.C. Cai
  • B. Chen
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DOI: 10.1007/s00339-006-3571-7

Cite this article as:
Lai, Y., Feng, J., Qiao, B. et al. Appl. Phys. A (2006) 84: 21. doi:10.1007/s00339-006-3571-7

Abstract

The multi-state storage capability of phase-change memory (PCM) was confirmed by using stacked chalcogenide layers as storage medium. The stacked films were prepared by stacking a pure Ge2Sb2Te5 (GST) layer, a tungsten layer and a silicon-doped GST layer. The electrical properties of the stacked films were also investigated. The results show that there are two negative differential resistance areas in the current-voltage (I–V) curve and three steps with three relatively stable resistance values in the resistance-voltage (R–V) curve, which indicate that the multi-state storage of PCM can be realized by using this stacked film structure. Qualitative analysis reveals that the multi-state storage capability of this stacked film structure is due to the successive crystallizations in a silicon-doped GST layer and a pure GST layer.

Copyright information

© Springer-Verlag 2006

Authors and Affiliations

  • Y.F. Lai
    • 1
  • J. Feng
    • 1
  • B.W. Qiao
    • 1
  • Y.F. Cai
    • 2
  • Y.Y. Lin
    • 2
  • T.A. Tang
    • 2
  • B.C. Cai
    • 1
  • B. Chen
    • 3
  1. 1.National Key Laboratory of Micro/Nano Fabrication Technology, Key Laboratory for Thin Film and Microfabrication of Ministry of EducationShanghai Jiaotong UniversityShanghaiP.R. China
  2. 2.National Key Laboratory of ASIC & SystemFudan UniversityShanghaiP.R. China
  3. 3.Silicon Storage Technology, Inc.SunnyvaleUSA