Rapid communication

Applied Physics A

, Volume 84, Issue 1, pp 21-25

First online:

Stacked chalcogenide layers used as multi-state storage medium for phase change memory

  • Y.F. LaiAffiliated withNational Key Laboratory of Micro/Nano Fabrication Technology, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Shanghai Jiaotong University
  • , J. FengAffiliated withNational Key Laboratory of Micro/Nano Fabrication Technology, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Shanghai Jiaotong University Email author 
  • , B.W. QiaoAffiliated withNational Key Laboratory of Micro/Nano Fabrication Technology, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Shanghai Jiaotong University
  • , Y.F. CaiAffiliated withNational Key Laboratory of ASIC & System, Fudan University
  • , Y.Y. LinAffiliated withNational Key Laboratory of ASIC & System, Fudan University
  • , T.A. TangAffiliated withNational Key Laboratory of ASIC & System, Fudan University
  • , B.C. CaiAffiliated withNational Key Laboratory of Micro/Nano Fabrication Technology, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Shanghai Jiaotong University
  • , B. ChenAffiliated withSilicon Storage Technology, Inc.

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Abstract

The multi-state storage capability of phase-change memory (PCM) was confirmed by using stacked chalcogenide layers as storage medium. The stacked films were prepared by stacking a pure Ge2Sb2Te5 (GST) layer, a tungsten layer and a silicon-doped GST layer. The electrical properties of the stacked films were also investigated. The results show that there are two negative differential resistance areas in the current-voltage (I–V) curve and three steps with three relatively stable resistance values in the resistance-voltage (R–V) curve, which indicate that the multi-state storage of PCM can be realized by using this stacked film structure. Qualitative analysis reveals that the multi-state storage capability of this stacked film structure is due to the successive crystallizations in a silicon-doped GST layer and a pure GST layer.