, Volume 84, Issue 1-2, pp 21-25
Date: 24 Mar 2006

Stacked chalcogenide layers used as multi-state storage medium for phase change memory

Rent the article at a discount

Rent now

* Final gross prices may vary according to local VAT.

Get Access


The multi-state storage capability of phase-change memory (PCM) was confirmed by using stacked chalcogenide layers as storage medium. The stacked films were prepared by stacking a pure Ge2Sb2Te5 (GST) layer, a tungsten layer and a silicon-doped GST layer. The electrical properties of the stacked films were also investigated. The results show that there are two negative differential resistance areas in the current-voltage (I–V) curve and three steps with three relatively stable resistance values in the resistance-voltage (R–V) curve, which indicate that the multi-state storage of PCM can be realized by using this stacked film structure. Qualitative analysis reveals that the multi-state storage capability of this stacked film structure is due to the successive crystallizations in a silicon-doped GST layer and a pure GST layer.


64.60.Cn; 71.55.Jv; 85.30.De; 85.30.Fg