Applied Physics A

, Volume 83, Issue 1, pp 133–138

Synthesis and characterisation of co-evaporated tin sulphide thin films

Authors

    • Department of PhysicsIndian Institute of Science
  • K. Ramesh
    • Department of PhysicsIndian Institute of Science
  • R. Ganesan
    • Department of PhysicsIndian Institute of Science
  • K.T. Ramakrishna Reddy
    • Department of PhysicsSri Venkateswara University
  • K.R. Gunasekhar
    • Department of InstrumentationIndian Institute of Science
  • E.S.R. Gopal
    • Department of PhysicsIndian Institute of Science
Article

DOI: 10.1007/s00339-005-3475-y

Cite this article as:
Koteeswara Reddy, N., Ramesh, K., Ganesan, R. et al. Appl. Phys. A (2006) 83: 133. doi:10.1007/s00339-005-3475-y

Abstract

Tin sulphide films were grown at different substrate temperatures by a thermal co-evaporation technique. The crystallinity of the films was evaluated from X-ray diffraction studies. Single-phase SnS films showed a strong (040) orientation with an orthorhombic crystal structure and a grain size of 0.12 μm. The films showed an electrical resistivity of 6.1 Ω cm with an activation energy of 0.26 eV. These films exhibited an optical band gap of 1.37 eV and had a high optical absorption coefficient (>104 cm-1) above the band-gap energy. The results obtained were analysed to evaluate the potentiality of the co-evaporated SnS films as an absorber layer in solar photovoltaic devices.

Copyright information

© Springer-Verlag 2005