Applied Physics A

, Volume 83, Issue 1, pp 103–106

Growth and properties of epitaxial rare-earth scandate thin films

  • T. Heeg
  • J. Schubert
  • C. Buchal
  • E. Cicerrella
  • J.L. Freeouf
  • W. Tian
  • Y. Jia
  • D.G. Schlom
Article

DOI: 10.1007/s00339-005-3463-2

Cite this article as:
Heeg, T., Schubert, J., Buchal, C. et al. Appl. Phys. A (2006) 83: 103. doi:10.1007/s00339-005-3463-2

Abstract

Epitaxial rare-earth scandate thin films of 100–1500 nm in thickness have been prepared by pulsed laser deposition on SrTiO3(100) and MgO(100) substrates. Stoichiometry and crystallinity were investigated by Rutherford backscattering spectrometry/channelling (RBS/C), transmission electron microscopy, and X-ray diffraction. Electrical measurements on microstructured capacitors with a SrRuO3 bottom electrode and Au top contacts reveal dielectric constants of 20 to 27, leakage currents of 0.85 to 6 μA/cm2 at 250 kV/cm, and breakdown fields of 0.6 to 1.2 MV/cm. The optical bandgaps of the films range from 5.5 to 6 eV. The results substantiate the high potential of rare-earth scandates as alternative gate oxides.

Copyright information

© Springer-Verlag 2005

Authors and Affiliations

  • T. Heeg
    • 1
  • J. Schubert
    • 1
  • C. Buchal
    • 1
  • E. Cicerrella
    • 2
  • J.L. Freeouf
    • 2
  • W. Tian
    • 3
  • Y. Jia
    • 3
  • D.G. Schlom
    • 3
  1. 1.Institut für Schichten und Grenzflächen ISG1-IT and Center of Nanoelectronic Systems for Information Technology (cni)Forschungszentrum Jülich GmbHJülichGermany
  2. 2.Department of PhysicsPortland State UniversityPortlandUSA
  3. 3.Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkUSA