Article

Applied Physics A

, Volume 83, Issue 1, pp 103-106

First online:

Growth and properties of epitaxial rare-earth scandate thin films

  • T. HeegAffiliated withInstitut für Schichten und Grenzflächen ISG1-IT and Center of Nanoelectronic Systems for Information Technology (cni), Forschungszentrum Jülich GmbH Email author 
  • , J. SchubertAffiliated withInstitut für Schichten und Grenzflächen ISG1-IT and Center of Nanoelectronic Systems for Information Technology (cni), Forschungszentrum Jülich GmbH
  • , C. BuchalAffiliated withInstitut für Schichten und Grenzflächen ISG1-IT and Center of Nanoelectronic Systems for Information Technology (cni), Forschungszentrum Jülich GmbH
  • , E. CicerrellaAffiliated withDepartment of Physics, Portland State University
  • , J.L. FreeoufAffiliated withDepartment of Physics, Portland State University
  • , W. TianAffiliated withDepartment of Materials Science and Engineering, The Pennsylvania State University
  • , Y. JiaAffiliated withDepartment of Materials Science and Engineering, The Pennsylvania State University
  • , D.G. SchlomAffiliated withDepartment of Materials Science and Engineering, The Pennsylvania State University

Rent the article at a discount

Rent now

* Final gross prices may vary according to local VAT.

Get Access

Abstract

Epitaxial rare-earth scandate thin films of 100–1500 nm in thickness have been prepared by pulsed laser deposition on SrTiO3(100) and MgO(100) substrates. Stoichiometry and crystallinity were investigated by Rutherford backscattering spectrometry/channelling (RBS/C), transmission electron microscopy, and X-ray diffraction. Electrical measurements on microstructured capacitors with a SrRuO3 bottom electrode and Au top contacts reveal dielectric constants of 20 to 27, leakage currents of 0.85 to 6 μA/cm2 at 250 kV/cm, and breakdown fields of 0.6 to 1.2 MV/cm. The optical bandgaps of the films range from 5.5 to 6 eV. The results substantiate the high potential of rare-earth scandates as alternative gate oxides.