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Growth and properties of epitaxial rare-earth scandate thin films

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Abstract

Epitaxial rare-earth scandate thin films of 100–1500 nm in thickness have been prepared by pulsed laser deposition on SrTiO3(100) and MgO(100) substrates. Stoichiometry and crystallinity were investigated by Rutherford backscattering spectrometry/channelling (RBS/C), transmission electron microscopy, and X-ray diffraction. Electrical measurements on microstructured capacitors with a SrRuO3 bottom electrode and Au top contacts reveal dielectric constants of 20 to 27, leakage currents of 0.85 to 6 μA/cm2 at 250 kV/cm, and breakdown fields of 0.6 to 1.2 MV/cm. The optical bandgaps of the films range from 5.5 to 6 eV. The results substantiate the high potential of rare-earth scandates as alternative gate oxides.

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Correspondence to T. Heeg.

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73.61.Ng; 73.40.Rw; 77.22.Ch; 77.55.+f; 78.40.Ha

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Heeg, T., Schubert, J., Buchal, C. et al. Growth and properties of epitaxial rare-earth scandate thin films. Appl. Phys. A 83, 103–106 (2006). https://doi.org/10.1007/s00339-005-3463-2

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  • DOI: https://doi.org/10.1007/s00339-005-3463-2

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