Applied Physics A

, Volume 81, Issue 6, pp 1213–1219

Electron-beam poling in undoped, N- or Ge-doped MDECR H:SiO2 films

  • Q. Liu
  • B. Poumellec
  • C. Haut
  • D. Dragoe
  • R. Blum
  • G. Girard
  • J.-E. Bourée
  • A. Kudlinski
  • Y. Quiquempois
  • G. Blaise
Article

DOI: 10.1007/s00339-005-3311-4

Cite this article as:
Liu, Q., Poumellec, B., Haut, C. et al. Appl. Phys. A (2005) 81: 1213. doi:10.1007/s00339-005-3311-4

Abstract

Amorphous N- or Ge-doped H:SiO2 films deposited on silica by the matrix distributed electron cyclotron resonance-PECVD method were irradiated by an electron-beam with different doses in order to pole the material and induce second harmonic generation (SHG). SHG was measured using the Maker-fringe method. When irradiated at an acceleration voltage of 25 kV, an incident current of 5 nA during 480 s, the N-doped H:SiO2 films exhibited a maximum second harmonic signal in the order of 0.003 pm/V, but when irradiated with an acceleration voltage of 30 kV, at 5 nA during 240 s, the films exhibited a maximum second harmonic signal of 0.006 pm/V. With a smaller current of 0.5 nA during 25 s and 25 kV acceleration voltage, the Ge-doped H:SiO2 films (3.8 at. % Ge) showed a maximum second-order nonlinearity of 0.0005 pm/V. But an H:SiO2 films with a smaller Ge content (1.0 at. % Ge), showed a large SHG: d33=0.09 pm/V when irradiated at 25 kV, 0.5 nA during 15 s.

Copyright information

© Springer-Verlag 2005

Authors and Affiliations

  • Q. Liu
    • 1
  • B. Poumellec
    • 1
  • C. Haut
    • 1
  • D. Dragoe
    • 1
  • R. Blum
    • 1
  • G. Girard
    • 2
  • J.-E. Bourée
    • 2
  • A. Kudlinski
    • 3
  • Y. Quiquempois
    • 3
  • G. Blaise
    • 4
  1. 1.Laboratoire de Physico-Chimie de l’Etat Solide, UMR CNRS-UPS 8648Université de Paris SudOrsay CedexFrance
  2. 2.Laboratoire de Physique des interfaces et des couches minces, UMR CNRS-EP 7647Ecole polytechniquePalaiseauFrance
  3. 3.Laboratoire de Physique des Lasers, Atomes et Molécules, UMR CNRS-USTL 8523Université des Sciences et Technologies de LilleVilleneuve d’Ascq CedexFrance
  4. 4.Laboratoire de Physique des Solides, UMR CNRS-UPS 8502Université de Paris SudOrsay CedexFrance