Article

Applied Physics A

, Volume 81, Issue 4, pp 847-850

Enhancement of laser ablation yield by two color excitation

  • S. ZoppelAffiliated withPhotonics Institute, Vienna University of TechnologyResearch Centre for Microtechnologies, Vorarlberg University of Applied Sciences Email author 
  • , R. MerzAffiliated withResearch Centre for Microtechnologies, Vorarlberg University of Applied Sciences
  • , J. ZehetnerAffiliated withResearch Centre for Microtechnologies, Vorarlberg University of Applied Sciences
  • , G.A. ReiderAffiliated withPhotonics Institute, Vienna University of Technology

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Abstract

We present ablation results of silicon obtained by simultaneous irradiation of the sample with the fundamental beam of a picosecond-neodymium-vanadate (Nd:VAN) laser (1064 nm, 10 ps pulse duration) and a small amount of second harmonic (SH) produced in a thin nonlinear crystal. In this fashion, the ablation yield could be increased by 70%. In addition, the ablation quality was improved in terms of surface smoothness. The underlying mechanism can be attributed to a ‘seeding’ of the target area with free carriers by the 532 nm radiation.