Applied Physics A

, Volume 81, Issue 4, pp 847–850

Enhancement of laser ablation yield by two color excitation


DOI: 10.1007/s00339-005-3275-4

Cite this article as:
Zoppel, S., Merz, R., Zehetner, J. et al. Appl. Phys. A (2005) 81: 847. doi:10.1007/s00339-005-3275-4


We present ablation results of silicon obtained by simultaneous irradiation of the sample with the fundamental beam of a picosecond-neodymium-vanadate (Nd:VAN) laser (1064 nm, 10 ps pulse duration) and a small amount of second harmonic (SH) produced in a thin nonlinear crystal. In this fashion, the ablation yield could be increased by 70%. In addition, the ablation quality was improved in terms of surface smoothness. The underlying mechanism can be attributed to a ‘seeding’ of the target area with free carriers by the 532 nm radiation.

Copyright information

© Springer-Verlag 2005

Authors and Affiliations

  1. 1.Photonics InstituteVienna University of TechnologyViennaAustria
  2. 2.Research Centre for MicrotechnologiesVorarlberg University of Applied SciencesDornbirnAustria

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