Nanostructure fabrication by glancing angle ion beam assisted deposition of silicon
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- Schubert, E., Höche, T., Frost, F. et al. Appl. Phys. A (2005) 81: 481. doi:10.1007/s00339-005-3270-9
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Glancing angle deposition by utilizing an ion beam sputter process and a controlled substrate rotation is used to deposit silicon nanostructures with different structure varieties. The structures are grown on seeded and plain  silicon substrates at room temperature. The ratio of deposition rate to substrate angular frequency and the substrate surface properties determine the nanostructure geometry, size and assembly.