Applied Physics A

, Volume 81, Issue 2, pp 317–324

Femtosecond dynamics of dielectric films in the pre-ablation regime


DOI: 10.1007/s00339-005-3216-2

Cite this article as:
Mero, M., Sabbah, A., Zeller, J. et al. Appl. Phys. A (2005) 81: 317. doi:10.1007/s00339-005-3216-2


The ultra-fast dynamics of dielectric oxide materials excited close to the laser-damage threshold is studied by performing transient reflection and transmission pump–probe measurements on TiO2, Ta2O5, and HfO2 films. The time-dependent dielectric constant is retrieved taking into account standing-wave effects of both pump and probe. A sub-100-fs transient is followed by a 1-ps transient, during which a sign reversal from negative to positive is observed in the real part of the induced change in the dielectric function, indicating the formation of deep defect states, possibly self-trapped excitons.

Copyright information

© Springer-Verlag 2005

Authors and Affiliations

  1. 1.Department of Physics and AstronomyUniversity of New MexicoAlbuquerqueUSA