, Volume 81, Issue 2, pp 317-324
Date: 16 Mar 2005

Femtosecond dynamics of dielectric films in the pre-ablation regime

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The ultra-fast dynamics of dielectric oxide materials excited close to the laser-damage threshold is studied by performing transient reflection and transmission pump–probe measurements on TiO2, Ta2O5, and HfO2 films. The time-dependent dielectric constant is retrieved taking into account standing-wave effects of both pump and probe. A sub-100-fs transient is followed by a 1-ps transient, during which a sign reversal from negative to positive is observed in the real part of the induced change in the dielectric function, indicating the formation of deep defect states, possibly self-trapped excitons.


78.47.+p; 61.80.-x; 72.20.Jv