, Volume 80, Issue 6, pp 1179-1182
Date: 11 Mar 2005

Quantum dot photonic devices for lightwave communication

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For InAs-GaAs based quantum dot lasers emitting at 1300 nm digital modulation showing an open eye pattern up to 12 Gb/s at room temperature is demonstrated, at 10 Gb/s the bit error rate is below 10-12 at -2 dBm receiver power. Cut-off frequencies up to 20 GHz are realised for lasers emitting at 1.1 μm. Passively mode-locked QD lasers generate optical pulses with repetition frequencies between 5 and 50 GHz, with a minimum Fourier limited pulse length of 3 ps. The uncorrelated jitter is below 1 ps. We use here deeply etched narrow ridge waveguide structures which show excellent performance similar to shallow mesa structures, but a circular far field at a ridge width of 1 μm, improving coupling efficiency into fibers. No beam filamentation of the fundamental mode, low α-factors and strongly reduced sensitivity to optical feedback is observed. QD lasers are thus superior to QW lasers for any system or network.

Quantum dot semiconductor optical amplifiers (QD SOAs) demonstrate gain recovery times of 120–140 fs, 4–7 times faster than bulk/QW SOAs, and a net gain larger than 0.4 dB/(mm*QD layer) providing us with novel types of booster amplifiers and Mach–Zehnder interferometers.

These breakthroughs became possible due to systematic development of self-organized growth technologies.


81.07.Ta; 81.16.Dn; 42.55.Px; 42.60.-v