Applied Physics A

, Volume 80, Issue 2, pp 237–241

Experimental investigation of ablation efficiency and plasma expansion during femtosecond and nanosecond laser ablation of silicon

Article

DOI: 10.1007/s00339-004-2963-9

Cite this article as:
Zeng, X., Mao, X., Greif, R. et al. Appl. Phys. A (2005) 80: 237. doi:10.1007/s00339-004-2963-9

Abstract

Femtosecond laser (Ti:sapphire, 100 fs pulse duration) ablation of silicon in air was compared with nanosecond laser (Nd:YAG, 3 ns pulse duration) ablation at ultraviolet wavelength (266 nm). Laser ablation efficiency was studied by measuring crater depth as a function of pulse number. For the same number of laser pulses, the fs-ablated crater was about two times deeper than the ns-crater. The temperature and electron number density of the laser-induced plasma were determined from spectroscopic measurements. The electron number density and temperature of fs-induced plasmas decreased faster than ns-induced plasmas due to different energy deposition mechanisms. Images of the laser-induced plasma were obtained with femtosecond time-resolved laser shadowgraph imaging. Plasma expansion in both the perpendicular and the lateral directions were compared.

Copyright information

© Springer Berlin Heidelberg 2004

Authors and Affiliations

  1. 1.Lawrence Berkeley National LaboratoryBerkeleyUSA