Applied Physics A

, Volume 79, Issue 4, pp 969–971

Ablation plasma ion implantation using a dc power supply

  • M.C. Jones
  • R.M. Gilgenbach
  • B. Qi
  • Y.Y. Lau
  • G.L. Doll
Article

DOI: 10.1007/s00339-004-2585-2

Cite this article as:
Jones, M., Gilgenbach, R., Qi, B. et al. Appl. Phys. A (2004) 79: 969. doi:10.1007/s00339-004-2585-2
  • 45 Downloads

Abstract

Experiments are reported in which ablation plasma ion implantation (APII) has been demonstrated using a dc power supply. The ability to use a dc power supply for APII has been accomplished by using a perpendicular orientation between the target and the substrate. This perpendicular orientation significantly reduces the arcing between the target and the substrate, in contrast to previous experiments using a parallel target–substrate orientation. With this new technique a KrF laser may be fired during the dc high voltage, accelerating full-energy ions. Initial experiments using dc APII have shown that Ti is deposited and implanted onto the Si substrate, with the highest concentration of Ti located beneath the surface of the film. The deposition/implantation of Ti ions onto Si was verified by X-ray photoelectron spectroscopy.

Copyright information

© Springer-Verlag 2004

Authors and Affiliations

  • M.C. Jones
    • 1
  • R.M. Gilgenbach
    • 1
  • B. Qi
    • 1
  • Y.Y. Lau
    • 1
  • G.L. Doll
    • 2
  1. 1.Intense Energy Beam Interaction Laboratory, Nuclear Engineering and Radiological Sciences DepartmentUniversity of MichiganAnn ArborUSA
  2. 2.Advanced Materials Technology, Timken ResearchThe Timken CorporationCantonUSA