Applied Physics A

, Volume 78, Issue 4, pp 435–440

Nonlinear terahertz spectroscopy of semiconductor nanostructures

Authors

  • C. Luo
    • Department of ElectrophysicsNational Chiao Tung University
  • K. Reimann
    • Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie
  • M. Woerner
    • Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie
    • Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie
Article

DOI: 10.1007/s00339-003-2400-5

Cite this article as:
Luo, C., Reimann, K., Woerner, M. et al. Appl Phys A (2004) 78: 435. doi:10.1007/s00339-003-2400-5

Abstract

Nonlinear frequency conversion and electro-optic sampling allow for the generation and phase-resolved characterization of few-cycle pulses in the frequency range up to 50 THz. Electric field transients with amplitudes of up to several MV/cm are applied to study coherent nonlinear excitations of low-dimensional semiconductors. We report the first observation of Rabi oscillations on intersubband transitions of electrons in GaAs/AlGaAs quantum wells. Frequency and phase of such oscillations are controlled in the 0.3- to 2.5-THz range via the strength and shape of the mid-infrared driving pulse.

Copyright information

© Springer-Verlag 2004