Applied Physics A

, Volume 80, Issue 5, pp 1071–1075

Effect of excess Bi2O3 on the electrical properties and microstructure of (Bi1/2Na1/2)TiO3 ceramics

Authors

    • Department of Applied Physics and Materials Research CenterThe Hong Kong Polytechnic University
  • X.G. Tang
    • Department of Applied Physics and Materials Research CenterThe Hong Kong Polytechnic University
  • K.W. Kwok
    • Department of Applied Physics and Materials Research CenterThe Hong Kong Polytechnic University
  • H.L.W. Chan
    • Department of Applied Physics and Materials Research CenterThe Hong Kong Polytechnic University
  • C.L. Choy
    • Department of Applied Physics and Materials Research CenterThe Hong Kong Polytechnic University
Article

DOI: 10.1007/s00339-003-2350-y

Cite this article as:
Wang, X., Tang, X., Kwok, K. et al. Appl. Phys. A (2005) 80: 1071. doi:10.1007/s00339-003-2350-y

Abstract

(Bi1/2Na1/2)TiO3 ceramics (BNT) with 0–6 mol % of excess Bi2O3 are prepared by conventional solid-state sintering. The electrical properties of the samples are examined. The addition of excess Bi2O3 reduces the leakage current of BNT ceramics significantly, thus facilitating the poling process, and improves their piezoelectric properties slightly for certain amounts of added Bi2O3. BNT ceramics have very high dielectric constants and dissipation factors at low frequency and high temperature due to their high conductivity. Adding excess Bi2O3 to BNT ceramics affects their dielectric behavior and phase transition temperatures. Grain growth is suppressed by adding Bi2O3 and no second phase is observed for BNT ceramics with up to 6 mol % of excess Bi2O3 added.

Copyright information

© Springer-Verlag 2003