Applied Physics A

, Volume 76, Issue 4, pp 609–611

The synthesis of highly oriented GaN nanowire arrays

  • J.C. Wang
  • C.Z. Zhan
  • F.G. Li
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DOI: 10.1007/s00339-002-2019-y

Cite this article as:
Wang, J., Zhan, C. & Li, F. Appl Phys A (2003) 76: 609. doi:10.1007/s00339-002-2019-y

Abstract.

Highly oriented GaN nanowire arrays have been achieved by the catalytic reaction of gallium with ammonium. The resulting materials were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). SEM images show that the resulting materials are nanowire arrays with a uniform length of about 10 μm. XRD, EDS, TEM and SAED indicate that the nanowire arrays are single-crystal hexagonal GaN with a wurtzite structure. They have diameters of 10 to 20 nm.

PACS: 81.15.Gh; 73.61.Tm; 71.20.Nr 

Copyright information

© Springer-Verlag 2002

Authors and Affiliations

  • J.C. Wang
    • 1
  • C.Z. Zhan
    • 2
  • F.G. Li
    • 2
  1. 1.School of Physics, National Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871, P.R. ChinaCN
  2. 2.Institute of Physics, CAS, P.O. Box 603, Beijing 100080, P.R. ChinaCN