, Volume 76, Issue 4, pp 609-611

The synthesis of highly oriented GaN nanowire arrays

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Highly oriented GaN nanowire arrays have been achieved by the catalytic reaction of gallium with ammonium. The resulting materials were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). SEM images show that the resulting materials are nanowire arrays with a uniform length of about 10 μm. XRD, EDS, TEM and SAED indicate that the nanowire arrays are single-crystal hexagonal GaN with a wurtzite structure. They have diameters of 10 to 20 nm.

Received: 2 October 2002 / Accepted: 7 October 2002 / Published online: 17 December 2002
ID="*"Corresponding author. E-mail: wwwangjc@sina.com