Applied Physics A

, Volume 75, Issue 6, pp 691–693

High-quality GaN nanowires synthesized using a CVD approach

Authors

  • J.C. Wang
    • School of Physics, State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing 100 871, P.R. China
  • S.Q. Feng
    • School of Physics, State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing 100 871, P.R. China
  • D.P. Yu
    • School of Physics, State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing 100 871, P.R. China
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DOI: 10.1007/s00339-002-1455-z

Cite this article as:
Wang, J., Feng, S. & Yu, D. Appl Phys A (2002) 75: 691. doi:10.1007/s00339-002-1455-z

Abstract.

High-quality GaN nanowires were synthesized on a large-area Si substrate by direct reaction of gallium with ammonia using InCl3 as a catalyst. The morphology and microstructure of the resulting products were characterized using a field-emission scanning electron microscope (SEM), a high-resolution transmission electron microscope, and X-ray diffraction (XRD). XRD and electron diffraction revealed that the nanowires are of a hexagonal GaN phase with the wurtzite structure. The SEM study showed that the nanowires are straight and have a smooth morphology with lengths up to 500 μm. The present results reveal that InCl3 is an optimal catalyst in GaN nanowire production.

PACS: 61.46.+w; 68.65.+g; 81.05.Ys

Copyright information

© Springer-Verlag 2002