, Volume 100, Issue 4, pp 489-491

Realization of silicon quantum wires based on Si/SiGe/Si heterostructure

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We report on the successful fabrication of silicon quantum wires with SiO2 boundaries on SiGe/Si heterostructures by combining Si/SiGe/Si heteroepitaxy, selective chemical etching, and subsequent thermal oxidation. The observational result of scanning electron microscope is demonstrated. The present method provides a well-controllable way to fabricate silicon quantum wires.