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Zeitschrift für Physik B Condensed Matter

, Volume 100, Issue 4, pp 489-491

Realization of silicon quantum wires based on Si/SiGe/Si heterostructure

  • J. L. LiuAffiliated withDepartment of Physics and Institute of Solid State Physics, Nanjing University
  • , Y. ShiAffiliated withDepartment of Physics and Institute of Solid State Physics, Nanjing University
  • , F. WangAffiliated withDepartment of Physics and Institute of Solid State Physics, Nanjing University
  • , Y. LuAffiliated withDepartment of Physics and Institute of Solid State Physics, Nanjing University
  • , S. L. GuAffiliated withDepartment of Physics and Institute of Solid State Physics, Nanjing University
  • , Y. D. ZhengAffiliated withDepartment of Physics and Institute of Solid State Physics, Nanjing University

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Abstract

We report on the successful fabrication of silicon quantum wires with SiO2 boundaries on SiGe/Si heterostructures by combining Si/SiGe/Si heteroepitaxy, selective chemical etching, and subsequent thermal oxidation. The observational result of scanning electron microscope is demonstrated. The present method provides a well-controllable way to fabricate silicon quantum wires.