Continuum Mechanics and Thermodynamics

, Volume 26, Issue 2, pp 197–205

Hydrodynamic simulation of a n+nn+ silicon nanowire

Original Article

DOI: 10.1007/s00161-013-0296-7

Cite this article as:
Muscato, O. & Di Stefano, V. Continuum Mech. Thermodyn. (2014) 26: 197. doi:10.1007/s00161-013-0296-7

Abstract

Non-equilibrium electron transport in silicon nanowires has been tackled with a hydrodynamic model. This model has been formulated by taking the moments of the multisubband Boltzmann equation, coupled to the Schrödinger–Poisson system. Closure relations are obtained by means of the maximum entropy principle (MEP) of extended thermodynamics, including scattering of electrons with acoustic and nonpolar optical phonons. Simulation results for a quantum n+nn+ silicon diode are shown.

Keywords

Silicon nanowires Schrödinger–Poisson–Boltzmann system Hydrodynamic model Maximum entropy principle 

Copyright information

© Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  1. 1.Dipartimento di Matematica e InformaticaUniversità degli Studi di CataniaCataniaItaly

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