Zeitschrift für angewandte Mathematik und Physik ZAMP

, Volume 52, Issue 6, pp 1053–1070

High-field approximations of the energy-transport model for semiconductors with non-parabolic band structure

  • P. Degond
  • A. Jüngel

DOI: 10.1007/PL00001583

Cite this article as:
Degond, P. & Jüngel, A. Z. angew. Math. Phys. (2001) 52: 1053. doi:10.1007/PL00001583


An asymptotic analysis of the energy-transport equations for semiconductors with the scaled mean free path as small parameter is performed. Using a variant of the Chapman-Enskog method, high-field drift-diffusion models are derived. Furthermore, the dependence of the macroscopic parameters such as the mobility and the diffusivity are investigated for parabolic and non-parabolic band approximations (in the sense of Kane). Explicit expressions of the physical parameters are obtained.

Key words. High-field drift-diffusion models, Chapman-Enskog method, non-parabolic band, semiconductors.

Copyright information

© Birkhäuser Verlag, Basel, 2001

Authors and Affiliations

  • P. Degond
    • 1
  • A. Jüngel
    • 2
  1. 1.Laboratoire MIP, Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse Cedex, France, e-mail: degond@mip.ups-tlse.frFR
  2. 2.Fachbereich Mathematik und Statistik, Universität Konstanz, Fach D193, 78457 Konstanz, Germany, e-mail: juengel@fmi.uni-konstanz.deDE