Bulletin of Materials Science

, Volume 29, Issue 5, pp 523–527

Influence of bismuth on properties and microstructures of Sr0.5Ba0.5−xBixTiO3 thin films

Thin Films

DOI: 10.1007/BF02914084

Cite this article as:
Wenhong, T., Yin, W., Xinghua, F. et al. Bull Mater Sci (2006) 29: 523. doi:10.1007/BF02914084

Abstract

The influence of bismuth (Bi) on the dielectric and ferroelectric properties of Sr0.5Ba0.5−xBixTiO3 (BST, 0 ≤ x ≤ 0.030 mol) thin films was studied. The results showed that the dielectric constant (εr) and dielectric loss (tan δ) decreased, and temperature, Tm, for maximum and εr (Curie temperature), moved to lower temperature with increasing Bi content. The Pr, Ps and Ec were 0.22 μC/cm2, 0.32 μC/cm2 and 60 kV/cm, respectively for Sr0.5Ba0.485Bi0.015TiO3 thin films measured at 100 Hz, 20 V. The microstructure of BST thinfilms was studied by XRD and TEM. Tetragonal perovskite grains existed in BST thin films, but the grain size decreased with increasing doping ratio in BST. The characteristic absorption band for octahedron [TiO2] (471.65 cm−1) was shifted to lower wave number.

Keywords

BST thin films dielectric constant dielectric loss Bi dopant characteristic microstructures 

Copyright information

© The Indian Academy of Sciences 2006

Authors and Affiliations

  1. 1.Department of Materials Science and EngineeringJinan UniversityJinanPR China
  2. 2.Department of Foreign LanguagesJinan UniversityJinanPR China