Influence of bismuth on properties and microstructures of Sr0.5Ba0.5−xBixTiO3 thin films
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- Wenhong, T., Yin, W., Xinghua, F. et al. Bull Mater Sci (2006) 29: 523. doi:10.1007/BF02914084
The influence of bismuth (Bi) on the dielectric and ferroelectric properties of Sr0.5Ba0.5−xBixTiO3 (BST, 0 ≤ x ≤ 0.030 mol) thin films was studied. The results showed that the dielectric constant (εr) and dielectric loss (tan δ) decreased, and temperature, Tm, for maximum and εr (Curie temperature), moved to lower temperature with increasing Bi content. The Pr, Ps and Ec were 0.22 μC/cm2, 0.32 μC/cm2 and 60 kV/cm, respectively for Sr0.5Ba0.485Bi0.015TiO3 thin films measured at 100 Hz, 20 V. The microstructure of BST thinfilms was studied by XRD and TEM. Tetragonal perovskite grains existed in BST thin films, but the grain size decreased with increasing doping ratio in BST. The characteristic absorption band for octahedron [TiO2] (471.65 cm−1) was shifted to lower wave number.