Science in China Series A: Mathematics

, Volume 42, Issue 12, pp 1316–1322

Growth mechanism and quantum confinement effect of silicon nanowires

Authors

  • Sunqi Feng
    • Department of Physics, State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsPeking University
  • Dapeng Yu
    • Department of Physics, State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsPeking University
  • Hongzhou Zhang
    • Department of Physics, State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsPeking University
  • Zhigang Bai
    • Department of Physics, State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsPeking University
  • Yu Ding
    • Department of Physics, State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsPeking University
  • Qingling Hang
    • Department of Physics, State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsPeking University
  • Yinghua Zou
    • Department of Physics, State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsPeking University
  • Jingjing Wang
    • Department of Physics, State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsPeking University
Article

DOI: 10.1007/BF02876033

Cite this article as:
Feng, S., Yu, D., Zhang, H. et al. Sci. China Ser. A-Math. (1999) 42: 1316. doi:10.1007/BF02876033

Abstract

The methods for synthesizing one-dimensional Si nanowires with controlled diameter are introduced. The mechanism for the growth of Si nanowires and the growth model for different morphologies of Si nanowires are described, and the quantum confinement effect of the Si nanowires is presented.

Keywords

one-dimensional nano-structureSi nawo wiresVLS growth mechanismquantum confinement effect

Copyright information

© Science in China Press 1999