Wuhan University Journal of Natural Sciences

, Volume 9, Issue 6, pp 918–920

Modeling quantum transport in nanoscale vertical SOI nMOSFET


DOI: 10.1007/BF02850799

Cite this article as:
Jian-nong, T., Xue-chang, Z. & Xu-bang, S. Wuhan Univ. J. Nat. Sci. (2004) 9: 918. doi:10.1007/BF02850799


The electron transports in micro-architecture semiconductor are simulated using vertical SOI nMOSFET with different models. Some details in transport can be presented by changing channel length, channel thickness and drain voltage. An interesting phenomenon similar to collimation effect in mesoscopic system is observed. This may suggest the quite intriguing possibility that scattering may open new channel in sufficiently narrow devices.

Key words

semiconductorMOSFETtransportmesoscopic system

CLC number

TN 303TN 304

Copyright information

© Springer 2004

Authors and Affiliations

  1. 1.Institute of Pattern Recognition and Artifical Intelligence StateHuazhong University of Science and TechnologyWuhan, HubeiChina
  2. 2.Department of Electronic Science and TechnologyHuazhong University of Science and TechnologyWuhan, HubeiChina