Article

Wuhan University Journal of Natural Sciences

, Volume 9, Issue 6, pp 918-920

First online:

Modeling quantum transport in nanoscale vertical SOI nMOSFET

  • Tong Jian-nongAffiliated withInstitute of Pattern Recognition and Artifical Intelligence State, Huazhong University of Science and Technology Email author 
  • , Zou Xue-changAffiliated withInstitute of Pattern Recognition and Artifical Intelligence State, Huazhong University of Science and TechnologyDepartment of Electronic Science and Technology, Huazhong University of Science and Technology
  • , Shen Xu-bangAffiliated withInstitute of Pattern Recognition and Artifical Intelligence State, Huazhong University of Science and Technology

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Abstract

The electron transports in micro-architecture semiconductor are simulated using vertical SOI nMOSFET with different models. Some details in transport can be presented by changing channel length, channel thickness and drain voltage. An interesting phenomenon similar to collimation effect in mesoscopic system is observed. This may suggest the quite intriguing possibility that scattering may open new channel in sufficiently narrow devices.

Key words

semiconductor MOSFET transport mesoscopic system

CLC number

TN 303 TN 304