, Volume 22, Issue 8, pp 809-813

Growth of HgSe and Hg1−xCdxSe thin films by molecular beam epitaxy

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Thin epitaxial films of HgSe and Hg1−xCdxSe (x≤0.34) were successfully grown for the first time by molecular beam epitaxy. Film growth parameters are discussed, and results of structural, electrical, and optical studies are reported.