Bulletin of Materials Science

, Volume 27, Issue 2, pp 85–111

Deposition of metal chalcogenide thin films by successive ionic layer adsorption and reaction (SILAR) method

  • H. M. Pathan
  • C. D. Lokhande
Article

DOI: 10.1007/BF02708491

Cite this article as:
Pathan, H.M. & Lokhande, C.D. Bull Mater Sci (2004) 27: 85. doi:10.1007/BF02708491

Abstract

During last three decades, successive ionic layer adsorption and reaction (SILAR) method, has emerged as one of the solution methods to deposit a variety of compound materials in thin film form. The SILAR method is inexpensive, simple and convenient for large area deposition. A variety of substrates such as insulators, semiconductors, metals and temperature sensitive substrates (like polyester) can be used since the deposition is carried out at or near to room temperature. As a low temperature process, it also avoids oxidation and corrosion of the substrate. The prime requisite for obtaining good quality thin film is the optimization of preparative provisos viz. concentration of the precursors, nature of complexing agent, pH of the precursor solutions and adsorption, reaction and rinsing time durations etc.

In the present review article, we have described in detail, successive ionic layer adsorption and reaction (SILAR) method of metal chalcogenide thin films. An extensive survey of thin film materials prepared during past years is made to demonstrate the versatility of SILAR method. Their preparative parameters and structural, optical, electrical properties etc are described. Theoretical background necessary for the SILAR method is also discussed.

Keywords

Metal chalcogenides thin solid films SILAR method 

Abbreviations

Ad

Adsorption time

CBD

chemical bath deposition

Cy

total number of deposition cycles

EN

ethylenediamine

FTO

fluorine doped tin oxide

FM

force modulation microscopy

HH

hydrazine hydrate

ITO

indium doped tin oxide

LFM

lateral force microscopy

PEC

photoelectrochemical

Re

reaction time

Ref

references

Ri

rinsing time

SILAR

successive ionic layer adsorption and reaction

subs

substrate

TA

tartaric acid

TEA

triethanolamine

Temp

deposition temperature

Th

thickness of the film

Copyright information

© Indian Academy of Sciences 2004

Authors and Affiliations

  • H. M. Pathan
    • 1
  • C. D. Lokhande
    • 1
  1. 1.Department of PhysicsShivaji UniversityKolhapurIndia

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