Bulletin of Materials Science

, Volume 27, Issue 6, pp 501–504

Silicon—a new substrate for GaN growth

  • S. Pal
  • C. Jacob
Surface Studies

DOI: 10.1007/BF02707276

Cite this article as:
Pal, S. & Jacob, C. Bull Mater Sci (2004) 27: 501. doi:10.1007/BF02707276

Abstract

Generally, GaN-based devices are grown on silicon carbide or sapphire substrates. But these substrates are costly and insulating in nature and also are not available in large diameter. Silicon can meet the requirements for a low cost and conducting substrate and will enable integration of optoelectronic or high power electronic devices with Si based electronics. But the main problem that hinders the rapid development of GaN devices based on silicon is the thermal mismatch of GaN and Si, which generates cracks. In 1998, the first MBE grown GaN based LED on Si was made and now the quality of material grown on silicon is comparable to that on sapphire substrate. It is only a question of time before Si based GaN devices appear on the market. This article is a review of the latest developments in GaN based devices on silicon.

Keywords

GaNMOCVDepitaxial growthdevices

Copyright information

© Indian Academy of Sciences 2004

Authors and Affiliations

  • S. Pal
    • 1
  • C. Jacob
    • 1
  1. 1.Materials Science CentreIndian Institute of TechnologyKharagpurIndia