Korean Journal of Chemical Engineering

, Volume 21, Issue 1, pp 292–295

Structural and optical properties of InGaN/GaN triangular-shape quantum wells with different threading dislocation densities

Authors

  • Rak Jun Choi
    • School of Chemical Engineering and Technology and Semiconductor Physics Research CenterChonbuk National University
  • Hyung Jae Lee
    • School of Chemical Engineering and Technology and Semiconductor Physics Research CenterChonbuk National University
    • School of Chemical Engineering and Technology and Semiconductor Physics Research CenterChonbuk National University
  • Hyung Koun Cho
    • School of Chemical Engineering and Technology and Semiconductor Physics Research CenterChonbuk National University
    • Department of Metallurgical EngineeringDong-A University
Article

DOI: 10.1007/BF02705411

Cite this article as:
Choi, R.J., Lee, H.J., Hahn, Y. et al. Korean J. Chem. Eng. (2004) 21: 292. doi:10.1007/BF02705411

Abstract

Structural and optical properties of InGaN/GaN multiple triangular quantum well (QW) structures with different threading dislocation (TD) densities of 1.5×108 (sample A) and 4.5×108 cm-2 (sample B) have been studied. High resolution transmission electron microscopy and x-ray diffraction analysis showed more fluctuation of local In composition in the sample B, which was attributed to the stress field created by the dislocations as it provides a driving force for the migration of In atoms towards dislocations. Severe degradation of photoluminescence intensity of the sample B was also observed at < 50 K. The optical and structural properties of the InGaN/GaN triangular QW structures are overall substantially affected by the TD density.

Key words

InGaN/GaN Multiple Quantum Wells Light-emitting Diodes Threading Dislocation

Copyright information

© Korean Institute of Chemical Engineering 2004