Pramana

, Volume 65, Issue 3, pp 541–546

Laser-induced down-conversion parameters of singly and doubly doped ZnS phosphors

Authors

  • H. S. Bhatti
    • Department of PhysicsPunjabi University
  • Rajesh Sharma
    • Institute of Engineering and Emerging Technologies
  • N. K. Verma
    • SPMSThapar Institute of Engineering and Technology
Article

DOI: 10.1007/BF02704213

Cite this article as:
Bhatti, H.S., Sharma, R. & Verma, N.K. Pramana - J Phys (2005) 65: 541. doi:10.1007/BF02704213

Abstract

Singly and doubly doped ZnS phosphors have been synthesized using flux method. Laser-induced photoluminescence has been observed in ZnS-doped phosphors when these were excited by the pulsed UV N2 laser radiation. Due to down-conversion phenomenon, fast phosphorescence emission in the visible region is recorded in milliseconds time domain for ZnS:Mn while in the case of ZnS:Mn:killer (Fe, Co and Ni) the lifetime reduces to microseconds time domain. Experimentally observed luminescent emission parameters of excited states such as, lifetimes, trap-depth values and decay constants have been reported here at room temperature. The high efficiency and fast recombination times observed in doped ZnS phosphors make these materials very attractive for optoelectronic applications.

Keywords

UV laser excitationquencher impuritiesexcited state lifetimeslaserinduced photoluminescence

PACS Nos

78.55.-m78.55.Et78.55.Hx

Copyright information

© Indian Academy of Sciences 2005