Journal of Applied Spectroscopy

, Volume 64, Issue 5, pp 668–672

Procedure for rapid spectroscopic control of the distribution of oxygen and of doping impurities in silicon ingots

  • V. V. Litvinov
  • A. N. Petukh
  • Yu. M. Pokotilo
Article

DOI: 10.1007/BF02675331

Cite this article as:
Litvinov, V.V., Petukh, A.N. & Pokotilo, Y.M. J Appl Spectrosc (1997) 64: 668. doi:10.1007/BF02675331

Abstract

Spectral dependences of the coefficients of absorption by free carriers and of multiphoton absorption by a silicon lattice in the region of the interstitial oxygen band at 5.8 μm are established. A procedure for measurement of the distribution of oxygen and alloying impurities in silicon ingots is given. The effectiveness of the spectrometers developed for controlling the segregation of impurities and nonstationary convection of the silicon melt in growing ingots by the Czochralski method is shown.

Key words

oxygensiliconabsorptionconcentrationspectrometer

Copyright information

© Plenum Publishing Corporation 1997

Authors and Affiliations

  • V. V. Litvinov
  • A. N. Petukh
  • Yu. M. Pokotilo

There are no affiliations available