Journal of Electronic Materials

, Volume 25, Issue 7, pp 1121–1127

High thermoelectric figures of merit in PbTe quantum wells

  • T. C. Harman
  • D. L. Spears
  • M. J. Manfra
Article

DOI: 10.1007/BF02659913

Cite this article as:
Harman, T.C., Spears, D.L. & Manfra, M.J. JEM (1996) 25: 1121. doi:10.1007/BF02659913

Abstract

High-quality Pb1−xEuxTe/PbTe multiple quantum wells (MQWs) have been grown by molecular beam epitaxy. The measured 300K thermoelectric properties have been compared with that of the best bulk PbTe. This experimental investigation is the first detailed study of MQW structures designed to improve ZT of thermoelectric materials and has resulted in a breakthrough in the decades-long ZT ≅ 1 barrier for a room-temperature thermoelectric material. A value of Z2DT >1.2 has been achieved for these PbTe quantum wells.

Key words

Molecular beam epitaxy (MBE)multiple quantum wells (MQWs)PbTePb1−xEuxTe/PbTethermoelectric figure of merit

Copyright information

© The Metallurgical of Society of AIME 1996

Authors and Affiliations

  • T. C. Harman
    • 1
  • D. L. Spears
    • 1
  • M. J. Manfra
    • 1
  1. 1.Lincoln LaboratoryMassachusetts Institute of TechnologyLexington