Article

Journal of Electronic Materials

, Volume 3, Issue 3, pp 693-707

First online:

Three garnet compositions for bubble domain memories

  • J. W. NielsenAffiliated withBell Laboratories
  • , S. L. BlankAffiliated withBell Laboratories
  • , D. H. SmithAffiliated withBell Laboratories
  • , G. P. Vella-ColeiroAffiliated withBell Laboratories
  • , F. B. HagedornAffiliated withBell Laboratories
  • , R. L. BarnsAffiliated withBell Laboratories
  • , W. A. BiolsiAffiliated withBell Laboratories

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Abstract

The choice of magnetic garnet compositions for bubble memories is always a compromise dictated by the material requirements generated by the specifications on the memories. The three compositions reported, Y2.62Smo.38Fe3.85Ga1.15O12, Gd2.lLuO.9Fe4.4Al0.6O12, and Yl.92Sm0.1Ca0.98Fe4.02Ge0.98O12, represent three examples of such a compromise. The first composition is excellent for use in circuits operating at 100 KHz over a temperature range of -20° to 80°C. The second has a mobility up to 5000 cm/sec/0e and is capable of very high speed operation at the sacrifice of stability toward temperature. The third exhibits excellent stability toward temperature and has operated at 1 MHz but is compositionally more complex.

Melt compositions for film growth and a summary of magnetic properties are presented for the three compositions. Factors to be weighed in composition selection for bubble domain memories are discussed.

Keywords

magnetic garnets bubble domains memories garnet films