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Electronic characterization of heterojunctions by surface potential monitoring

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Abstract

An original approach for studying the formation of semiconductor heterojunctions and their electronic properties is discussed and illustrated. Monitoring the changes in the surface potential during the heterojunction formation lends itself to direct measurement of the band discontinuities, Debye length, and the width of the space-charge region at heterojunction interfaces. The contribution of an interface dipole is considered. The technique is demonstrated by a technologically significant experimental example.

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Authors and Affiliations

  1. Department of Electrical Engineering-Physical Electronics, Faculty of Engineering, Tel-Aviv University, 69978, Ramal-Aviv, Israel

    L. Kronik, M. Leibovitch, E. Fefer, V. Korobov & Yoram Shapira

Authors
  1. L. Kronik
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  2. M. Leibovitch
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  3. E. Fefer
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  4. V. Korobov
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  5. Yoram Shapira
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Kronik, L., Leibovitch, M., Fefer, E. et al. Electronic characterization of heterojunctions by surface potential monitoring. J. Electron. Mater. 24, 893–901 (1995). https://doi.org/10.1007/BF02653338

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  • DOI: https://doi.org/10.1007/BF02653338

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