International Journal of Infrared and Millimeter Waves

, Volume 16, Issue 5, pp 863–877

Silicon as an advanced window material for high power gyrotrons

  • V. V. Parshin
  • R. Heidinger
  • B. A. Andreev
  • A. V. Gusev
  • V. B. Shmagin
Article

DOI: 10.1007/BF02066662

Cite this article as:
Parshin, V.V., Heidinger, R., Andreev, B.A. et al. Int J Infrared Milli Waves (1995) 16: 863. doi:10.1007/BF02066662

Abstract

The absorptivity of high-purity grades of silicon (Si) and its reduction by subsequent doping procedures are investigated.

The dielectric data are given for the wide range of frequencies (30 – 330 GHz) and temperatures (30 – 330 K) in comparison with the data set for sapphire. The advanced material performance in high power window applications is discussed taking into account both dielectric properties of the optimized silicon grades and thermal conductivity.

Copyright information

© Plenum Publishing Corporation 1995

Authors and Affiliations

  • V. V. Parshin
    • 1
  • R. Heidinger
    • 2
  • B. A. Andreev
    • 3
  • A. V. Gusev
    • 3
  • V. B. Shmagin
    • 3
  1. 1.Applied Physics InstituteRussian Academy of SciencesNizhny NovgorodRussia
  2. 2.Forschungszentrum Karlsruhe Institut für MaterialforschungKarlsruheGermany
  3. 3.Institute Chemistry of High-Purity SubstancesRussian Academy of SciencesNizhny NovgorodRussia