Abstract
The experimental results obtained with the chalcogenide glass Ge15Te81S2As2 with imposed overall pressure up to 700 MPa are presented. The material exhibits the switching effect and the memory effect. It is shown that the overall pressure changes remarkably d.c. electrical conductivity of the amorphous semiconductor. It is assumed that the changes in conductivity are caused by changes in activation energy. The changes in activation energy within the range of considered pressures are, as follows from our measurements, ∂ΔE/∂p≈−10·95×10−5 eV/MPa +p × 10·41 W 10−7 eV/MPa2. The assumption of the activation energy dependence on pressurep are confirmed also by measurements of dependence Inσ vs. 1/T at various pressures.
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Zámečník, J., Baník, I., Skočková, E. et al. Influence of the overall pressure on electrical conductivity of the amorphous semiconductor Ge15Te81S2As2 . Czech J Phys 26, 1053–1058 (1976). https://doi.org/10.1007/BF01587453
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DOI: https://doi.org/10.1007/BF01587453