Applied Physics A

, Volume 62, Issue 1, pp 33–37

The melting of silicon nanocrystals: Submicron thin-film structures derived from nanocrystal precursors

  • A. N. Goldstein
Regular Papers

DOI: 10.1007/BF01568084

Cite this article as:
Goldstein, A.N. Appl. Phys. A (1996) 62: 33. doi:10.1007/BF01568084


The size-dependent melting temperature has been shown for the group IV semiconductor silicon. A cursory comparison is made between silicon nanocrystal melting and that observed in the group II–VI material Cds and the group III–V material GaAs. Particles dispersed at a number density such that there are interactions between nanocrystals are observed to sinter before size-dependent melting occurs. Using an electron beam to selectively remove an organic mask from a substrate, this phenomenon is exploited to produce thin-film structures. This work has implications in the production of nanoelectronics, nonlinear optics and solar conversion technologies.


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Copyright information

© Springer-Verlag 1996

Authors and Affiliations

  • A. N. Goldstein
    • 1
  1. 1.Starfire Electronic Development Ltd.Bloomfield HillsUSA

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