Applied Physics A

, Volume 61, Issue 5, pp 455–466

New concepts for controlled homoepitaxy

  • G. Rosenfeld
  • N. N. Lipkin
  • W. Wulfhekel
  • J. Kliewer
  • K. Morgenstern
  • B. Poelsema
  • G. Comsa
Article

DOI: 10.1007/BF01540247

Cite this article as:
Rosenfeld, G., Lipkin, N.N., Wulfhekel, W. et al. Appl. Phys. A (1995) 61: 455. doi:10.1007/BF01540247

Abstract

On the basis of a kinetic growth model we discuss new methods to grow atomically flat homoepitaxial layers in a controlled way. The underlying principle of these methods is to change the growth parameters during growth of an atomic layer in such a way that nucleation on top of a growing layer is suppressed, and thus, layer-by-layer growth is achieved. Experimentally, this can be realized by changing the substrate temperature or deposition rate during monolayer growth in a well-defined way. The same can be achieved at constant temperature and deposition rate by simultaneous ion bombardment during the early stages of growth of a monolayer, or by adding suitable surfactants to the system. Model experiments on Ag(111) and on Cu(111) using thermal energy atom scattering and scanning tunneling microscopy demonstrate the success of these methods.

PACS

68.55.—a 61.50.Cj 81.15.—z 

Copyright information

© Springer-Verlag 1995

Authors and Affiliations

  • G. Rosenfeld
    • 1
  • N. N. Lipkin
    • 1
  • W. Wulfhekel
    • 1
  • J. Kliewer
    • 1
  • K. Morgenstern
    • 1
  • B. Poelsema
    • 2
  • G. Comsa
    • 1
  1. 1.Institut für Grenzflächenforschung und VakuumphysikForschungszentrum Jülich GmbHJülichGermany
  2. 2.Faculty of Applied Physics and Centre for Materials Research (CMO)University of TwenteEnschedeThe Netherlands